$ 162.448

A2T20H160W04NR3 User Reference Manual Guide - NXP

Manufacturer:

NXP

Category:

BJTs

Case Package:

OM-780

Description:

RF Power Transistor,1880 to 2025MHz, 90W, Typ Gain in dB is 17 @ 1960MHz, 28V, LDMOS, SOT1818

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Pages guide:

Typical Application Circuit Diagram onP2

Package Footprint Pad Layout onP15P16P17P18P19

Soldering Temperature onP1P2P9P10P11

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A2T20H160W04NR3 Documents

NXP

21 Pages / 0.86 MByte

NXP

11 Pages / 0.55 MByte

NXP

5 Pages / 0.1 MByte

NXP

RF Power Transistor,1880 to 2025MHz, 90W, Typ Gain in dB is 17 @ 1960MHz, 28V, LDMOS, SOT1818

NXP

Airfast RF Power LDMOS Transistor 1880-2025MHz, 28W Avg., 28V

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