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RQ3E080BNTB Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

HSMT-8

Description:

HSMT N-CH 30V 8A

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

RQ3E080BNTB Datasheet (14 Pages)

RQ3E080BNTB Datasheet PDF (14 Pages)

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RQ3E080BNTB Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

HSMT-8

Polarity

N-CH

Power Dissipation

2 W

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

Rise Time

20 ns

Input Capacitance (Ciss)

660pF @15V(Vds)

Fall Time

7 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

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RQ3E080BNTB Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

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RQ3E080BNTB Environmental

RQ3E080BNTB Function Overview

RQ3E080BNTB Documents

RQ3E080BNTB Datasheet

ROHM Semiconductor

14 Pages / 2.59 MByte

RQ3E080BNTB Other Datasheet PDF

ROHM Semiconductor

12 Pages / 2.59 MByte

RQ3E080 Documents

RQ3E080GNTB Datasheet PDF

ROHM Semiconductor

HSMT N-CH 30V 8A

RQ3E080BNTB Datasheet PDF

ROHM Semiconductor

HSMT N-CH 30V 8A

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