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RF4E110GNTR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

DFN2020-8

Description:

MOSFET N-CH 30V 11A 8-HUML

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RF4E110GNTR Datasheet PDF (12 Pages)

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RF4E110GNTR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

DFN2020-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0087 Ω

Polarity

N-Channel

Power Dissipation

2 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Rise Time

5.5 ns

Input Capacitance (Ciss)

504pF @15V(Vds)

Fall Time

3 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

RF4E110GNTR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃

RF4E110GNTR Environmental

RF4E110GNTR Function Overview

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12 Pages / 2.39 MByte

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RF4E110GNTR Datasheet PDF

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