$ 0.316

MW6S004NT1 Application Note - NXP

Manufacturer:

NXP

Category:

MOSFETs

Case Package:

PLD-1

Description:

RF Power Transistor,1 to 2000MHz, 4W, Typ Gain in dB is 18 @ 1960MHz, 28V, LDMOS, SOT1811

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Pages guide:

Block Diagram onP2P3

Package Outline Dimension onP11

Packaging Infomation onP1

Specifications onP1

Electrical Specification onP2

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MW6S004NT1 Documents

MW6S004NT1 Other Datasheet PDF

NXP

3 Pages / 0.44 MByte

MW6S004NT1 Application Note

NXP

13 Pages / 0.53 MByte

MW6S004NT1 Other References

NXP

1 Pages / 0.21 MByte

MW6S004 Documents

MW6S004NT1 Datasheet PDF

NXP

RF Power Transistor,1 to 2000MHz, 4W, Typ Gain in dB is 18 @ 1960MHz, 28V, LDMOS, SOT1811

MW6S004NT1 Datasheet PDF

Freescale

MOSFET RF N-CH 28V 4W PLD-1.5

MW6S004N Datasheet PDF

NXP

Lateral N-Channel RF Power MOSFET, 1-2000MHz, 4W, 28V

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