MRF6S20010NR1 Application Note - NXP

RF Power Transistor,1600 to 2200MHz, 10W, Typ Gain in dB is 15.5 @ 2170MHz, 28V, LDMOS, SOT1731

MOSFET RF N-CH 28V 10W TO2704 GW

MOSFET RF N-CH 28V 10W TO270-2

RF Power Transistor,1600 to 2200MHz, 10W, Typ Gain in dB is 15.5 @ 2170MHz, 28V, LDMOS, SOT1732

GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200MHz, 10W, 28V

GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200MHz, 10W, 28V