$ 24.98

MRF6S20010NR1 Application Note - Freescale

Manufacturer:

Freescale

Category:

MOSFETs

Case Package:

TO-270

Description:

MOSFET RF N-CH 28V 10W TO270-2

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Pages guide:

Pinout Diagram onP1Hot

Block Diagram onP4P10P14

Package Outline Dimension onP20

Packaging Infomation onP1

Specifications onP1

Electrical Specification onP2P3

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MRF6S20010NR1 Documents

MRF6S20010NR1 Datasheet

Freescale

27 Pages / 0.72 MByte

MRF6S20010NR1 Other Datasheet PDF

Freescale

27 Pages / 0.67 MByte

MRF6S20010NR1 Application Note

Freescale

28 Pages / 0.85 MByte

MRF6S20010 Documents

MRF6S20010GNR1 Datasheet PDF

NXP

RF Power Transistor,1600 to 2200MHz, 10W, Typ Gain in dB is 15.5 @ 2170MHz, 28V, LDMOS, SOT1731

MRF6S20010GNR1 Datasheet PDF

Freescale

MOSFET RF N-CH 28V 10W TO2704 GW

MRF6S20010NR1 Datasheet PDF

Freescale

MOSFET RF N-CH 28V 10W TO270-2

MRF6S20010NR1 Datasheet PDF

NXP

RF Power Transistor,1600 to 2200MHz, 10W, Typ Gain in dB is 15.5 @ 2170MHz, 28V, LDMOS, SOT1732

MRF6S20010GN Datasheet PDF

NXP

GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200MHz, 10W, 28V

MRF6S20010N Datasheet PDF

NXP

GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200MHz, 10W, 28V

MRF6S20010N Datasheet PDF

Freescale

Rf Power Field Effect Transistors

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