$ 1

AFT18HW355SR5,178 Application Note - NXP

Manufacturer:

NXP

Description:

RF POWER FIELD-EFFECT TRANSISTOR

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Electrical Specification onP2P3

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AFT18HW355SR5,178 Documents

AFT18HW355SR5,178 Application Note

NXP

16 Pages / 0.45 MByte

AFT18HW355 Documents

AFT18HW355SR5 Datasheet PDF

NXP

RF Power Transistor,1805 to 1880MHz, 350W, Typ Gain in dB is 15.2 @ 1880MHz, 28V, LDMOS, SOT1829

AFT18HW355SR6 Datasheet PDF

NXP

RF Power Transistor,1805 to 1880MHz, 350W, Typ Gain in dB is 15.2 @ 1880MHz, 28V, LDMOS, SOT1829

AFT18HW355SR6 Datasheet PDF

Freescale

Trans RF MOSFET N-CH 65V 5Pin NI-1230S T/R

AFT18HW355SR5 Datasheet PDF

Freescale

Trans RF MOSFET N-CH 65V 5Pin NI-1230S T/R

AFT18HW355SR5,178 Datasheet PDF

NXP

RF POWER FIELD-EFFECT TRANSISTOR

AFT18HW355S Datasheet PDF

NXP

Airfast RF Power LDMOS Transistor, 1805-1880MHz, 63W Avg., 28V

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