VO615A-4X006 Datasheet PDF - Vishay Semiconductor

●DESCRIPTION

●The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package.

●The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements.

●FEATURES

●• CTR offered in 9 groups

●• Isolation materials according to UL94-VO

●• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)

●• Climatic classification 40/110/21 (IEC 60068 part 1)

●• Temperature range - 40 °C to + 110 °C

●• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak

●• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV

●• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS

●• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak

●• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175

●• Thickness through insulation ≥ 0.75 mm

●• External creepage distance > 8 mm

●APPLICATIONS

●Circuits for safe protective separation against electrical

●shock according to safety class II (reinforced isolation):

●• for appl. class I - IV at mains voltage ≤ 300 V

●• for appl. class I - IV at mains voltage ≤ 600 V according to table 1 of IEC 60664-1, suitable for:

●\- Switch-mode power supplies

●\- Line receiver

●\- Computer peripheral interface

●\- Microprocessor system interface