VF30120SG-E3/4W Datasheet PDF - Vishay Semiconductor

●High-Voltage Trench MOS Barrier Schottky Rectifier

●FEATURES

●• Trench MOS Schottky technology

●• Low forward voltage drop, low power losses

●• High efficiency operation

●• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

●• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)

●• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

●TYPICAL APPLICATIONS

●For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc

●converters and reverse battery protection.