UM6K1N Datasheet PDF - ROHM Semiconductor

●2.5V Drive Nch+Nch MOS FET

●Features

●1) Two 2SK3018 transistors in a single UMT package.

●2) The MOS FET elements are independent, eliminating mutual interference.

●3) Mounting cost and area can be cut in half.

●4) Low On-resistance.

●5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.

●Structure

●Silicon N-channel MOS FET

●Applications

●Interfacing, switching (30V, 100mA)