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TK9J90E,S1E Datasheet PDF - Toshiba

Manufacturer:

Toshiba

Category:

MOSFETs

Case Package:

TO-3-3

Description:

Trans MOSFET N-CH 900V 9A 3Pin TO-3P(N)

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TK9J90E,S1E Datasheet PDF (9 Pages)

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TK9J90E,S1E Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Power Dissipation

250 W

Drain to Source Voltage (Vds)

900 V

Rise Time

40 ns

Input Capacitance (Ciss)

2000pF @25V(Vds)

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

250W (Tc)

TK9J90E,S1E Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Size-Length

15.5 mm

Size-Width

4.5 mm

Size-Height

20 mm

Operating Temperature

150℃ (TJ)

TK9J90E,S1E Environmental

TK9J90E,S1E Function Overview

TK9J90E,S1E Documents

TK9J90E,S1E Other Datasheet PDF

Toshiba

9 Pages / 0.22 MByte

TK9J90ES1 Documents

TK9J90E,S1E Datasheet PDF

Toshiba

Trans MOSFET N-CH 900V 9A 3Pin TO-3P(N)

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