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TK56E12N1,S1X(S Datasheet PDF - Toshiba

Manufacturer:

Toshiba

Category:

MOSFETs

Case Package:

TO-220

Description:

TO-220 N-CH 120V 112A

Pictures:

3D Model

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Product Pictures

Documentation:

TK56E12N1,S1X(S Datasheet (9 Pages)

Package Outline Dimension on8 Page

TK56E12N1,S1X(S Datasheet PDF (9 Pages)

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TK56E12N1,S1X(S Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220

Polarity

N-CH

Power Dissipation

168 W

Drain to Source Voltage (Vds)

120 V

Continuous Drain Current (Ids)

112A

Rise Time

20 ns

Input Capacitance (Ciss)

4200pF @60V(Vds)

Fall Time

23 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

168 W

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TK56E12N1,S1X(S Size & Package

TYPE

DESCRIPTION

Material

Silicon

Size-Length

10.16 mm

Size-Width

4.45 mm

Size-Height

15.1 mm

Operating Temperature

-55℃ ~ 150℃

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TK56E12N1,S1X(S Environmental

TK56E12N1,S1X(S Function Overview

TK56E12N1,S1X(S Documents

TK56E12N1,S1X(S Datasheet

Toshiba

9 Pages / 0.25 MByte

TK56E12N1S1 Documents

TK56E12N1,S1X(S Datasheet PDF

Toshiba

TO-220 N-CH 120V 112A

TK56E12N1,S1X Datasheet PDF

Toshiba

Mosfet n Ch 120V 56A To-220

TK56E12N1S1X Datasheet PDF

Toshiba

MOSFET

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