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Part Datasheet Search > MOSFETs > ST Microelectronics > STP23NM60N Datasheet PDF
STP23NM60N
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STP23NM60N Datasheet PDF (19 Pages)
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STP23NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
180 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
9.50 A
Rise Time
15 ns
Input Capacitance (Ciss)
2050pF @50V(Vds)
Input Power (Max)
150 W
Fall Time
36 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
150W (Tc)

STP23NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
150℃ (TJ)

STP23NM60N Documents

ST Microelectronics
19 Pages / 0.54 MByte
ST Microelectronics
18 Pages / 0.82 MByte
ST Microelectronics
22 Pages / 1.07 MByte

STP23NM60 Documents

ST Microelectronics
TO-220 N-CH 600V 19.5A
ST Microelectronics
Trans MOSFET N-CH 600V 19A 3Pin(3+Tab) TO-220 Tube
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