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STD11NM60N Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-252-3

Description:

N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET

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Documentation:

STD11NM60N Datasheet (20 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STD11NM60N Datasheet PDF (20 Pages)

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STD11NM60N Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

10.0 A

Case/Package

TO-252-3

Power Dissipation

90W (Tc)

Input Capacitance

850 pF

Gate Charge

31.0 nC

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

10.0 A

Rise Time

18.5 ns

Input Capacitance (Ciss)

850pF @50V(Vds)

Input Power (Max)

90 W

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

90W (Tc)

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STD11NM60N Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

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STD11NM60N Environmental

STD11NM60N Function Overview

STD11NM60N Documents

STD11NM60N Datasheet

ST Microelectronics

20 Pages / 0.61 MByte

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