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Part Datasheet Search > MOSFETs > ST Microelectronics > STB60N55F3 Datasheet PDF
STB60N55F3
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STB60N55F3 Datasheet PDF (20 Pages)
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STB60N55F3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
8.5 mΩ
Polarity
N-Channel
Power Dissipation
110 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
56.0 A, 80.0 A
Rise Time
50 ns
Input Capacitance (Ciss)
2200pF @25V(Vds)
Input Power (Max)
110 W
Fall Time
11.5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

STB60N55F3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
10.75 mm
Size-Width
10.4 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB60N55F3 Documents

ST Microelectronics
20 Pages / 0.6 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STB60N55 Documents

ST Microelectronics
D2PAK N-CH 55V 80A
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