SSS4N60B Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

●Features

●• 4.0A, 600V, RDS(on)= 2.5Ω@VGS= 10 V

●• Low gate charge ( typical 22 nC)

●• Low Crss ( typical 14 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability

●• TO-220F package isolation = 4.0kV (Note 6)