SSM6L36FE Datasheet PDF - Toshiba

●TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type ○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) • Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V)