SSM3K01F Datasheet PDF - Toshiba

●TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • Small package • Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)