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Part Datasheet Search > MOSFETs > VISHAY > SQM120P06-07L_GE3 Datasheet PDF
SQM120P06-07L_GE3
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SQM120P06-07L_GE3 Datasheet PDF (10 Pages)
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SQM120P06-07L_GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0056 Ω
Polarity
P-Channel
Power Dissipation
375 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
120A
Rise Time
23 ns
Input Capacitance (Ciss)
11423pF @25V(Vds)
Fall Time
32 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375000 mW

SQM120P06-07L_GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
Minimum Packing Quantity
800

SQM120P06-07L_GE3 Documents

VISHAY
10 Pages / 0.17 MByte

SQM120P0607 Documents

VISHAY
TO-263-3P-CH 60V 120A 6.7mΩ
VISHAY
Trans MOSFET P-CH 60V 120A Automotive 3Pin(2+Tab) D2PAK
Vishay Siliconix
MOSFET P-CH 60V 120A TO263
Vishay Semiconductor
VISHAY SQM120P06-07L_GE3 MOSFET Transistor, P Channel, -120A, -60V, 0.0056Ω, -10V, -2V New
Vishay Semiconductor
MOSFET P-CH 60V 120A TO263
VISHAY
Automotive P-channel 60V D-s 175℃ Mosfet
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