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Part Datasheet Search > MOSFETs > Infineon > SPB11N60S5ATMA1 Datasheet PDF
SPB11N60S5ATMA1
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SPB11N60S5ATMA1 Datasheet PDF (11 Pages)
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SPB11N60S5ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Polarity
N-CH
Power Dissipation
125 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
11A
Rise Time
35 ns
Input Capacitance (Ciss)
1460pF @25V(Vds)
Input Power (Max)
125 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

SPB11N60S5ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SPB11N60S5ATMA1 Documents

Infineon
11 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.12 MByte

SPB11N60S5 Documents

Infineon
D2PAK N-CH 600V 11A
Siemens Semiconductor
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon
D2PAK N-CH 600V 11A
Infineon
D2PAK N-CH 600V 11A
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