●The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
● High-Bandwidth Data Path (up to 500 MHz(1))
● 5-V Tolerant I/Os With Device Powered Up
●or Powered Down
● Low and Flat ON-State Resistance (ron)
●Characteristics Over Operating Range
●(ron = 3 Ω Typ)
● Rail-to-Rail Switching on Data I/O Ports
● 0-V to 5-V Switching With 3.3-V VCC
● 0-V to 3.3-V Switching With 2.5-V VCC
● Bidirectional Data Flow With Near-Zero
●Propagation Delay
● Low Input and Output Capacitance Minimizes
●Loading and Signal Distortion
●(Cio(OFF) = 4 pF Typ)
● Fast Switching Frequency (fOE = 20 MHz Max)
● Data and Control Inputs Provide Undershoot
●Clamp Diodes
● Low Power Consumption
●(ICC = 0.3 mA Typ)
● VCC Operating Range From 2.3 V to 3.6 V
● Data I/Os Support 0-V to 5-V Signaling Levels
●(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
● Control Inputs Can Be Driven by TTL,
●5-V, or 3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per
●JESD 78, Class II
● ESD Performance Tested Per JESD 22
● 2000-V Human-Body Model
●(A114-B, Class II)
● 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications:
●USB Interface, Differential Signal Interface, Bus
●Isolation, Low-Distortion Signal Gating
