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Part Datasheet Search > BJTs > Infineon > SMBT2907AE6327HTSA1 Datasheet PDF
SMBT2907AE6327HTSA1
$ 0.058
SMBT2907AE6327HTSA1 Datasheet PDF (9 Pages)
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SMBT2907AE6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
200 MHz
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
330 mW
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
0.6A
hFE Min
100 @150mA, 10V
Input Power (Max)
330 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
330 mW

SMBT2907AE6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.9 mm
Operating Temperature
150℃ (TJ)

SMBT2907AE6327HTSA1 Documents

Infineon
9 Pages / 0.52 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
34 Pages / 0.66 MByte
Infineon
1 Pages / 0.14 MByte

SMBT2907AE6327 Documents

Infineon
SOT-23 PNP 60V 0.6A
Infineon
INFINEON SMBT 2907A E6327 Bipolar (BJT) Single Transistor, PNP, 60V, 200MHz, 330mW, 600mA, 100 hFE
Infineon
PNP SCHALT-TRANS.60V 0,6A SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
Infineon
SOT-23 PNP 60V 0.6A
Infineon
SOT-23 PNP 60V 0.6A
Infineon
Trans GP BJT PNP 60V 0.6A 3Pin SOT-23 T/R
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