SMBJ3V3-E3/52 Datasheet PDF - General Semiconductor

●Features:

● Low Profile Package

● Ideal for Automated Placement

● Glass Passivated Chip Junction

● Available in Uni-Directional and Bi-Directional

● 400 W Peak Pulse Power Capability with a 10/1000 μs Waveform, Repetitive Rate (Duty Cycle): 0.01% (300 W Above 78 V)

● Excellent Clamping Capability

● Very Fast Response Time

● Low Incremental Surge Resistance

● Meets MSL level 1, Per J-STD-020, LF Maximum Peak of 260°C

● Solder Dip 260°C, 40 s

● Component in Accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

●Applications:

● Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.