SM25JZ51 Datasheet PDF - Toshiba

Diode Switching 2.5kV 0.26A 2Pin Case G-12

Aluminum Electrolytic Capacitors

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

Synchronous DRAM Module, 32MX72, 5.4ns, CMOS, DIMM-168

Digital Input Stereo, 2 W, Class-D Audio Power Amplifier

Keypad Switch, 1 Switches, SPST, Momentary-tactile, 0.05A, 12VDC, 3.04N, Solder Terminal, Surface Mount-straight, LEAD FREE

D Subminiature Connector, 15 Contact(s), Female, Solder Terminal, ROHS COMPLIANT

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, MELF-A, 2PIN