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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SIS892ADN-T1-GE3 Datasheet PDF
SIS892ADN-T1-GE3
$ 3.242
SIS892ADN-T1-GE3 Datasheet PDF (13 Pages)
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SIS892ADN-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
1212
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.027 Ω
Polarity
N-Channel
Power Dissipation
52 W
Threshold Voltage
1.5 V
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
550pF @50V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
52 W

SIS892ADN-T1-GE3 Size & Package

TYPE
DESCRIPTION
Size-Length
3.4 mm
Size-Width
3.4 mm
Size-Height
1.12 mm
Operating Temperature
-55℃ ~ 150℃

SIS892ADN-T1-GE3 Documents

Vishay Semiconductor
13 Pages / 0.5 MByte
Vishay Semiconductor
13 Pages / 0.53 MByte
Vishay Semiconductor
4 Pages / 0.27 MByte

SIS892ADNT1 Documents

VISHAY
PowerPak1212-8 N-CH 100V 28A 33mΩ
Vishay Siliconix
MOSFET N-CH 100V 28A PPAK 1212
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.4A 8Pin PowerPAK 1212 T/R
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