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SIR688DP-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Case Package:

SOP

Description:

MOSFET N-CH 60V 60A PPAK SO-8

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SIR688DP-T1-GE3 Datasheet (13 Pages)

SIR688DP-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

SOP

Power Dissipation

5.4 W

Rise Time

120 ns

Input Capacitance (Ciss)

3105pF @30V(Vds)

Fall Time

9 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

5400 mW

View Datasheet >

SIR688DP-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

6.15 mm

Size-Width

5.15 mm

Size-Height

1.04 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SIR688DP-T1-GE3 Environmental

SIR688DP-T1-GE3 Function Overview

SIR688DP-T1-GE3 Documents

SIR688DP-T1-GE3 Datasheet

VISHAY

13 Pages / 0.31 MByte

SIR688DPT1 Documents

SIR688DP-T1-GE3 Datasheet PDF

VISHAY

MOSFET N-CH 60V 60A PPAK SO-8

SIR688DP-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

SIR688DP-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 60V 60A PPAK SO-8

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