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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SIR662DP-T1-GE3 Datasheet PDF
SIR662DP-T1-GE3
$ 0.63
SIR662DP-T1-GE3 Datasheet PDF (14 Pages)
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SIR662DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerPAKSO-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0022 Ω
Polarity
N-Channel
Power Dissipation
104 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
60 V
Operating Temperature (Max)
150 ℃

SIR662DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
6.15 mm
Size-Width
5.15 mm
Size-Height
1.04 mm
Operating Temperature
-55℃ ~ 150℃

SIR662DP-T1-GE3 Documents

Vishay Semiconductor
14 Pages / 0.37 MByte
Vishay Semiconductor
13 Pages / 0.37 MByte
Vishay Semiconductor
4 Pages / 0.27 MByte

SIR662DPT1 Documents

VISHAY
SOIC-8 N-CH 60V 60A 2.7mΩ
Vishay Siliconix
SiR662DP Series 60V 60A 0.0027Ω SMT N-Channel MOSFET -PowerPAK-SO-8
Vishay Semiconductor
VISHAY SIR662DP-T1-GE3 MOSFET Transistor, N Channel, 60A, 60V, 0.0022Ω, 10V, 1V
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