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SIJ478DP-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOP-8

Description:

SOIC-8 N-CH 80V 60A 8mΩ

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SIJ478DP-T1-GE3 Datasheet (10 Pages)

SIJ478DP-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

5 Pin

Case/Package

SOP-8

Drain to Source Resistance (on) (Rds)

8 mΩ

Polarity

N-CH

Power Dissipation

5 W

Threshold Voltage

2.6 V

Drain to Source Voltage (Vds)

80 V

Continuous Drain Current (Ids)

60A

Rise Time

8 ns

Input Capacitance (Ciss)

1855pF @40V(Vds)

Fall Time

7 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

5000 mW

View Datasheet >

SIJ478DP-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃

Minimum Packing Quantity

2500

View Datasheet >

SIJ478DP-T1-GE3 Environmental

SIJ478DP-T1-GE3 Function Overview

SIJ478DP-T1-GE3 Documents

SIJ478DP-T1-GE3 Datasheet

VISHAY

10 Pages / 0.18 MByte

SIJ478DP-T1-GE3 Other Datasheet PDF

VISHAY

11 Pages / 0.17 MByte

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SIJ478DP-T1-GE3 Datasheet PDF

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SOIC-8 N-CH 80V 60A 8mΩ

SIJ478DP-T1-GE3 Datasheet PDF

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MOSFET N-CH 80V 60A PPAK SO-8

SIJ478DP-T1-GE3 Datasheet PDF

Vishay Semiconductor

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