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SIHU3N50D-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

TO-251-3

Description:

MOSFET N-CH 500V 3A TO251 IPAK

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SIHU3N50D-GE3 Datasheet (7 Pages)

Part Numbering System on1 Page

SIHU3N50D-GE3 Datasheet PDF (7 Pages)

View Datasheet

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SIHU3N50D-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-251-3

Drain to Source Resistance (on) (Rds)

2.6 Ω

Polarity

N-Channel

Power Dissipation

104 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

500 V

Input Capacitance (Ciss)

175pF @100V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

69W (Tc)

View Datasheet >

SIHU3N50D-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

SIHU3N50D-GE3 Environmental

SIHU3N50D-GE3 Function Overview

SIHU3N50D-GE3 Documents

SIHU3N50D-GE3 Datasheet

Vishay Siliconix

7 Pages / 0.12 MByte

SIHU3N50D-GE3 Other Datasheet PDF

Vishay Siliconix

8 Pages / 0.17 MByte

SIHU3N50D-GE3 Drawing Diagrams

Vishay Siliconix

1 Pages / 0.04 MByte

SIHU3N50D-GE3 Notice File

Vishay Siliconix

2 Pages / 0.04 MByte

SIHU3N50 Documents

SIHU3N50D-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-GE3 Datasheet PDF

VISHAY

TO-251-3 N-CH 500V 3A 3.2Ω

SIHU3N50D-E3 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-E3 Datasheet PDF

VISHAY

TO-251-3 N-CH 500V 3A 3.2Ω

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