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SIHU3N50D-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-251

Description:

MOSFET N-CH 500V 3A TO251 IPAK

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SIHU3N50D-E3 Datasheet (9 Pages)

SIHU3N50D-E3 Datasheet PDF (9 Pages)

View Datasheet

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SIHU3N50D-E3 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-251

Drain to Source Resistance (on) (Rds)

2.6 Ω

Polarity

N-Channel

Power Dissipation

104 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

500 V

Operating Temperature (Max)

150 ℃

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SIHU3N50D-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tube

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SIHU3N50D-E3 Environmental

SIHU3N50D-E3 Documents

SIHU3N50D-E3 Datasheet

Vishay Semiconductor

9 Pages / 0.17 MByte

SIHU3N50D-E3 Other Datasheet PDF

Vishay Semiconductor

8 Pages / 0.17 MByte

SIHU3N50 Documents

SIHU3N50D-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-GE3 Datasheet PDF

VISHAY

TO-251-3 N-CH 500V 3A 3.2Ω

SIHU3N50D-E3 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 500V 3A TO251 IPAK

SIHU3N50D-E3 Datasheet PDF

VISHAY

TO-251-3 N-CH 500V 3A 3.2Ω

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