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SIHP30N60E-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220-3 N-CH 600V 29A 125mΩ

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SIHP30N60E-GE3 Datasheet (8 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page

SIHP30N60E-GE3 Datasheet PDF (8 Pages)

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SIHP30N60E-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

125 mΩ

Polarity

N-Channel

Power Dissipation

250 W

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

29A

Rise Time

32 ns

Input Capacitance (Ciss)

2600pF @100V(Vds)

Input Power (Max)

250 W

Fall Time

36 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

250 W

View Datasheet >

SIHP30N60E-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.51 mm

Size-Width

4.65 mm

Size-Height

15.49 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

View Datasheet >

SIHP30N60E-GE3 Environmental

SIHP30N60E-GE3 Function Overview

SIHP30N60E-GE3 Documents

SIHP30N60E-GE3 Datasheet

VISHAY

8 Pages / 0.27 MByte

SIHP30N60E-GE3 Other Datasheet PDF

VISHAY

8 Pages / 0.15 MByte

SIHP30N60 Documents

SIHP30N60E-GE3 Datasheet PDF

VISHAY

TO-220-3 N-CH 600V 29A 125mΩ

SIHP30N60E-E3 Datasheet PDF

VISHAY

Trans MOSFET N-CH 600V 29A 3Pin(3+Tab) TO-220AB

SIHP30N60E-E3 Datasheet PDF

Vishay Semiconductor

VISHAY SIHP30N60E-E3 Power MOSFET, N Channel, 29A, 600V, 0.104Ω, 10V, 2V

SIHP30N60E-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 600V 29A TO220AB

SIHP30N60E-GE3 Datasheet PDF

Vishay Semiconductor

VISHAY SIHP30N60E-GE3 Power MOSFET, N Channel, 29A, 600V, 0.104Ω, 10V, 2V

SIHP30N60E-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 600V 29A TO220AB

SIHP30N60E-GE3 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

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