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Part Datasheet Search > MOSFETs > VISHAY > SIHG33N65EF-GE3 Datasheet PDF
SIHG33N65EF-GE3
$ 4.412
SIHG33N65EF-GE3 Datasheet PDF (7 Pages)
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SIHG33N65EF-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.095 Ω
Polarity
N-Channel
Power Dissipation
313 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
650 V
Rise Time
56 ns
Input Capacitance (Ciss)
4026pF @10V(Vds)
Fall Time
71 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
313000 mW

SIHG33N65EF-GE3 Size & Package

TYPE
DESCRIPTION
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.82 mm
Operating Temperature
-55℃ ~ 150℃

SIHG33N65EF-GE3 Documents

VISHAY
7 Pages / 0.13 MByte
VISHAY
13 Pages / 0.37 MByte

SIHG33N65 Documents

VISHAY
Trans MOSFET N-CH 650V 31.6A 3Pin(3+Tab) TO-247AC
VISHAY
TO-247-3 N-CH 700V 32.4A 90mΩ
Vishay Siliconix
Mosfet, n-Ch, 650V, 32.4A, To-247ac-3
Vishay Semiconductor
VISHAY SIHG33N65EF-GE3 Power MOSFET, N Channel, 31.6A, 650V, 0.095Ω, 10V, 4V New
Vishay Siliconix
MOSFET N-CH 650V 31.6A TO-247AC
Vishay Semiconductor
VISHAY SIHG33N65E-GE3 Power MOSFET, N Channel, 32.4A, 650V, 0.09Ω, 10V, 4V New
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