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SI9926CDY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET 20V 8A 3.1W 18mohm @ 4.5V

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3D Model

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Documentation:

SI9926CDY-T1-E3 Datasheet (10 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page

SI9926CDY-T1-E3 Datasheet PDF (10 Pages)

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SI9926CDY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Power Rating

3.1 W

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.018 Ω

Polarity

Dual N-Channel

Power Dissipation

3.1 W

Threshold Voltage

1.5 V

Input Capacitance

1200pF @10V

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Drain to Source)

20 V

Continuous Drain Current (Ids)

8.00 A

Rise Time

10.0 ns

Thermal Resistance

32℃/W (RθJA)

Input Capacitance (Ciss)

1200pF @10V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2000 mW

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SI9926CDY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

3.9 mm

Size-Height

1.5 mm

Operating Temperature

-55℃ ~ 150℃

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SI9926CDY-T1-E3 Environmental

SI9926CDY-T1-E3 Function Overview

SI9926CDY-T1-E3 Documents

SI9926CDY-T1-E3 Datasheet

Vishay Semiconductor

10 Pages / 0.18 MByte

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Vishay Semiconductor

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