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SI9926BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC

Description:

Trans MOSFET N-CH 20V 6.2A 8Pin SOIC N T/R

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SI9926BDY-T1-GE3 Datasheet PDF (6 Pages)

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SI9926BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

SOIC

Drain to Source Resistance (on) (Rds)

0.02 Ω

Polarity

Dual N-Channel

Power Dissipation

1.14 W

Threshold Voltage

600 mV

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

6.20 A

Rise Time

50 ns

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

SI9926BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Operating Temperature

-55℃ ~ 150℃

SI9926BDY-T1-GE3 Environmental

SI9926BDY-T1-GE3 Documents

SI9926BDY-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

6 Pages / 0.09 MByte

SI9926BDYT1 Documents

SI9926BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET DUAL N-CH 20V 6.2A 8-SOIC

SI9926BDY-T1-E3 Datasheet PDF

VISHAY

MOSFET DUAL N-CH 20V 6.2A 8-SOIC

SI9926BDY-T1-E3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 20V 6.2A 8Pin SOIC N T/R

SI9926BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET 20V 8.2A 2W 20mohm @ 4.5V

SI9926BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 20V 6.2A 8Pin SOIC N T/R

SI9926BDY-T1-E3 Datasheet PDF

Vishay Intertechnology

Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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