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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI9433BDY-T1-E3 Datasheet PDF
SI9433BDY-T1-E3
Part 3D Model
$ 0.322

SI9433BDY-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.03 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
-20.0 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
-6.20 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1300 mW

SI9433BDY-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
3.9 mm
Size-Height
1.55 mm
Operating Temperature
-55℃ ~ 150℃

SI9433BDY-T1-E3 Documents

Vishay Semiconductor
8 Pages / 0.17 MByte
Vishay Semiconductor
8 Pages / 0.16 MByte

SI9433BDYT1 Documents

Vishay Siliconix
MOSFET 20V 6.2A 2.3W
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SOIC-8P-CH 20V 4.5A 40mΩ
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SOIC-8P-CH 20V 4.5A 40mΩ
Vishay Siliconix
MOSFET P-CH 20V 4.5A 8-SOIC
Vishay Semiconductor
Trans MOSFET P-CH 20V 4.5A 8Pin SOIC N T/R
Vishay Siliconix
TRANSISTOR 4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Vishay Semiconductor
Trans MOSFET P-CH 20V 4.5A 8Pin SOIC N T/R
Vishay Intertechnology
Vishay Semiconductor
P-CHANNEL 20V (D-S) MOSFET
Vishay Siliconix
P-CHANNEL 20V (D-S) MOSFET
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