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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI7922DN-T1-E3 Datasheet PDF
SI7922DN-T1-E3
$ 1.426

SI7922DN-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
1212-8
Drain to Source Resistance (on) (Rds)
0.23 Ω
Polarity
N-Channel
Power Dissipation
1.3 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
25.0 A
Thermal Resistance
77℃/W (RθJA)
Input Power (Max)
1.3 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI7922DN-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI7922DN-T1-E3 Documents

Vishay Siliconix
12 Pages / 0.53 MByte
Vishay Siliconix
12 Pages / 0.52 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

SI7922DNT1 Documents

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PowerPak1212-8 Dual N 100V 1.8A 195mΩ
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SI7922DN-T1-E3 Dual N-channel MOSFET Module, 1.8A, 100V, 8Pin PowerPAK 1212
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Trans MOSFET N-CH 100V 1.8A 8Pin PowerPAK 1212 T/R
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MOSFET 2N-CH 100V 1.8A 1212-8
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.8A 8Pin PowerPAK 1212 T/R
Vishay Intertechnology
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