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Part Datasheet Search > MOSFETs > VISHAY > SI7860DP-T1 Datasheet PDF
SI7860DP-T1
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SI7860DP-T1 Datasheet PDF (5 Pages)
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SI7860DP-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO
Drain to Source Resistance (on) (Rds)
8.00 mΩ
Polarity
N-Channel
Power Dissipation
5.00 W
Drain to Source Voltage (Vds)
30.0 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
11.0 A
Rise Time
12 ns
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
5000 mW

SI7860DP-T1 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI7860DP-T1 Documents

VISHAY
5 Pages / 0.09 MByte
VISHAY
11 Pages / 0.45 MByte

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