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SI7850DPT1
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SI7850DPT1 Datasheet PDF (5 Pages)
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SI7850DPT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO
Drain to Source Resistance (on) (Rds)
31.0 mΩ
Polarity
N-Channel
Power Dissipation
1.80 W
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
6.20 A

SI7850DPT1 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SI7850DPT1 Documents

Vishay Siliconix
5 Pages / 0.09 MByte

SI7850 Documents

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MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6.2A; PowerPAK SO-8; PD 1.8W; -55de
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MOSFET N-CH 60V 6.2A PPAK SO-8
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VISHAY SI7850DP-T1-GE3 MOSFET Transistor, N Channel, 10.3A, 60V, 31mohm, 20V, 3V
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MOSFET 60V 10.3A 4.5W
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