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Part Datasheet Search > MOSFETs > VISHAY > SI7848BDP-T1-E3 Datasheet PDF
SI7848BDP-T1-E3
Part 3D Model
$ 0.937

SI7848BDP-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Power Rating
36 W
Drain to Source Resistance (on) (Rds)
9 mΩ
Polarity
N-Channel
Power Dissipation
4.2 W
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
47.0 A
Rise Time
150 ns
Input Capacitance (Ciss)
2000pF @20V(Vds)
Input Power (Max)
36 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
4200 mW

SI7848BDP-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI7848BDP-T1-E3 Documents

VISHAY
13 Pages / 0.37 MByte
VISHAY
13 Pages / 0.29 MByte

SI7848BDPT1 Documents

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SOIC-8 N-CH 40V 16A 9mΩ
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SOIC-8 N-CH 40V 16A 9mΩ
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Single N-Channel 40V 0.009Ω SMT TrenchFET Power Mosfet - PowerPAK SO-8
Vishay Siliconix
MOSFET N-CH 40V 47A PPAK SO-8
Vishay Semiconductor
VISHAY SI7848BDP-T1-E3 MOSFET Transistor, N Channel, 47A, 40V, 0.0074Ω, 4.5V, 1V
Vishay Semiconductor
VISHAY SI7848BDP-T1-GE3 MOSFET Transistor, N Channel, 47A, 40V, 0.0074Ω, 10V, 3V
Vishay Intertechnology
Vishay Intertechnology
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