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Part Datasheet Search > Vishay Intertechnology > SI7454DP-T1-E3 Datasheet PDF
SI7454DP-T1-E3
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SI7454DP-T1-E3 Datasheet PDF (11 Pages)
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SI7454DP-T1-E3 Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
PowerPAK SO
Drain to Source Resistance (on) (Rds)
0.028 Ω
Power Dissipation
1.9 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI7454DP-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃

SI7454DP-T1-E3 Documents

Vishay Intertechnology
11 Pages / 0.3 MByte

SI7454DPT1 Documents

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Power Field-Effect Transistor, 5A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SO-8
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MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
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MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg
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VISHAY SI7454DP-T1-GE3 MOSFET Transistor, N Channel, 7.8A, 100V, 40mohm, 20V, 4V
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Vishay Intertechnology
Vishay Intertechnology
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