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SI7454DP-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

PowerPAKSO-8

Description:

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.028Ω; ID 5A; PowerPAK SO-8; PD 1.9W; -55deg

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Documentation:

SI7454DP-T1-E3 Datasheet (12 Pages)

SI7454DP-T1-E3 Datasheet PDF (12 Pages)

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SI7454DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

PowerPAKSO-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.028 Ω

Polarity

N-Channel

Power Dissipation

1.9 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

7.80 A

Rise Time

10 ns

Fall Time

20 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1900 mW

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SI7454DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5.99 mm

Size-Width

5.15 mm

Size-Height

1.04 mm

Operating Temperature

-55℃ ~ 150℃

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SI7454DP-T1-E3 Environmental

SI7454DP-T1-E3 Function Overview

SI7454DP-T1-E3 Documents

SI7454DP-T1-E3 Datasheet

Vishay Semiconductor

12 Pages / 0.3 MByte

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