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SI7386DP-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SO-8

Description:

SOIC-8 N-CH 30V 19A 7mΩ

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Documentation:

SI7386DP-T1-E3 Datasheet (6 Pages)

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SI7386DP-T1-E3 Datasheet PDF (6 Pages)

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SI7386DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SO-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0058 Ω

Polarity

N-Channel

Power Dissipation

1.8 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

19.0 A

Rise Time

9 ns

Input Power (Max)

1.8 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

5000 mW

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SI7386DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

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SI7386DP-T1-E3 Environmental

SI7386DP-T1-E3 Function Overview

SI7386DP-T1-E3 Documents

SI7386DP-T1-E3 Datasheet

VISHAY

6 Pages / 0.09 MByte

SI7386DP-T1-E3 Other Datasheet PDF

VISHAY

12 Pages / 0.28 MByte

SI7386DP-T1-E3 Notice File

VISHAY

4 Pages / 0.27 MByte

SI7386DPT1 Documents

SI7386DP-T1-E3 Datasheet PDF

VISHAY

SOIC-8 N-CH 30V 19A 7mΩ

SI7386DP-T1-GE3 Datasheet PDF

VISHAY

SOIC-8 N-CH 30V 19A 7mΩ

SI7386DP-T1-E3 Datasheet PDF

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SI7386DP-T1-GE3 Datasheet PDF

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SI7386DP-T1-E3 Datasheet PDF

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VISHAY SI7386DP-T1-E3 MOSFET Transistor, N Channel, 12A, 30V, 0.0058Ω, 10V, 2V

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VISHAY SI7386DP-T1-GE3 MOSFET Transistor, N Channel, 19A, 30V, 0.0058Ω, 4.5V, 2.5V

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