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SI4936CDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 30V 5A 8Pin SOIC N T/R

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Documentation:

SI4936CDY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on1 Page

SI4936CDY-T1-GE3 Datasheet PDF (10 Pages)

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SI4936CDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.033 Ω

Polarity

Dual N-Channel

Power Dissipation

2.3 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Rise Time

13 ns

Input Capacitance (Ciss)

325pF @15V(Vds)

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1700 mW

View Datasheet >

SI4936CDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4936CDY-T1-GE3 Environmental

SI4936CDY-T1-GE3 Export Classifications

SI4936CDY-T1-GE3 Function Overview

SI4936CDY-T1-GE3 Documents

SI4936CDY-T1-GE3 Datasheet

Vishay Semiconductor

10 Pages / 0.24 MByte

SI4936CDY-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

9 Pages / 0.17 MByte

SI4936CDYT1 Documents

SI4936CDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8 Dual N 30V 5A 2.8Ω

SI4936CDY-T1-GE3 Datasheet PDF

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VISHAY SI4936CDY-T1-GE3 Dual MOSFET, Dual N Channel, 5.8A, 30V, 33mohm, 10V, 3V

SI4936CDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 5A 8Pin SOIC N T/R

SI4936CDY-T1-E3 Datasheet PDF

VISHAY

SO N-CH 30V 5A

SI4936CDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8SO

SI4936CDY-T1-E3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 5A 8Pin SO T/R

SI4936CDY-T1-GE3 Datasheet PDF

Vishay Intertechnology

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