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SI4840BDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8 N-CH 40V 19A 9mΩ

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Documentation:

SI4840BDY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on1 Page

SI4840BDY-T1-GE3 Datasheet PDF (10 Pages)

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SI4840BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0074 Ω

Polarity

N-Channel

Power Dissipation

2.5 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

40 V

Continuous Drain Current (Ids)

19A

Input Capacitance (Ciss)

2000pF @20V(Vds)

Input Power (Max)

6 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.56 W

View Datasheet >

SI4840BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

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SI4840BDY-T1-GE3 Environmental

SI4840BDY-T1-GE3 Function Overview

SI4840BDY-T1-GE3 Documents

SI4840BDY-T1-GE3 Datasheet

VISHAY

10 Pages / 0.23 MByte

SI4840BDY-T1-GE3 Other Datasheet PDF

VISHAY

26 Pages / 1.92 MByte

SI4840BDY-T1-GE3 Notice File

VISHAY

3 Pages / 0.08 MByte

SI4840BDYT1 Documents

SI4840BDY-T1-E3 Datasheet PDF

VISHAY

SOIC-8 N-CH 40V 19A 9mΩ

SI4840BDY-T1-GE3 Datasheet PDF

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SOIC-8 N-CH 40V 19A 9mΩ

SI4840BDY-T1-E3 Datasheet PDF

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SI4840BDY-T1-GE3 Datasheet PDF

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MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/

SI4840BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 40V 19A 8SOIC

SI4840BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/

SI4840BDY-T1-E3 Datasheet PDF

Vishay Intertechnology

SI4840BDYT1E3 Datasheet PDF

Vishay Semiconductor

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