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Part Datasheet Search > MOSFETs > VISHAY > SI4838BDY-T1-GE3 Datasheet PDF
SI4838BDY-T1-GE3
Part 3D Model
$ 0.266

SI4838BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
2.1 mΩ
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
400 mV
Drain to Source Voltage (Vds)
12 V
Continuous Drain Current (Ids)
34A
Input Capacitance (Ciss)
5760pF @6V(Vds)
Input Power (Max)
5.7 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

SI4838BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI4838BDY-T1-GE3 Documents

VISHAY
9 Pages / 0.2 MByte
VISHAY
9 Pages / 0.19 MByte

SI4838BDYT1 Documents

VISHAY
SOIC-8 N-CH 12V 34A 2.7mΩ
Vishay Semiconductor
Trans MOSFET N-CH 12V 22.5A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET N-CH 12V 34A 8-SOIC
Vishay Intertechnology
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