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SI4808DY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

Description:

MOSFET 2N-CH 30V 5.7A 8SOIC

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SI4808DY-T1-E3 Datasheet PDF (6 Pages)

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SI4808DY-T1-E3 Specifications

TYPE

DESCRIPTION

Case/Package

Drain to Source Resistance (on) (Rds)

22.0 mΩ

Polarity

N-Channel

Power Dissipation

2.00 W

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

7.50 A

SI4808DY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

SI4808DY-T1-E3 Environmental

SI4808DY-T1-E3 Documents

SI4808DY-T1-E3 Other Datasheet PDF

Vishay Semiconductor

6 Pages / 0.1 MByte

SI4808DYT1 Documents

SI4808DY-T1 Datasheet PDF

Vishay Siliconix

Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4808DY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH/SCHOTTKY 30V 8SOIC

SI4808DY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH/SCHOTTKY 30V 8SOIC

SI4808DY-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET 2N-CH 30V 5.7A 8SOIC

SI4808DY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET 2N-CH 30V 5.7A 8SOIC

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