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SI4442DY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 30V 15A 8Pin SOIC N T/R

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3D Model

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Documentation:

SI4442DY-T1-E3 Datasheet (5 Pages)

Part Numbering System on1 Page

SI4442DY-T1-E3 Datasheet PDF (5 Pages)

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SI4442DY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.0035 Ω

Polarity

N-Channel

Power Dissipation

3.5 W

Threshold Voltage

1.5 V

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±12.0 V

Continuous Drain Current (Ids)

22.0 A

Rise Time

11 ns

Fall Time

47 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1600 mW

View Datasheet >

SI4442DY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4442DY-T1-E3 Environmental

SI4442DY-T1-E3 Function Overview

SI4442DY-T1-E3 Documents

SI4442DY-T1-E3 Datasheet

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SI4442DY-T1-E3 Notice File

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