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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI3552DV-T1 Datasheet PDF
SI3552DV-T1
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SI3552DV-T1 Datasheet PDF
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SI3552DV-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
TSOP
Drain to Source Resistance (on) (Rds)
105 mΩ
Polarity
N-Channel, P-Channel
Power Dissipation
1.15 W
Drain to Source Voltage (Vds)
30.0 V
Breakdown Voltage (Drain to Source)
±30.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
51.0 A

SI3552 Documents

VISHAY
TSOP-6 N+P 30V 2.5A 105mΩ,175mΩ
Vishay Siliconix
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6Pin TSOP T/R
VISHAY
TSOP-6 N+P 30V 2.5A 200mΩ
Vishay Siliconix
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6Pin TSOP T/R
Vishay Semiconductor
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6Pin TSOP T/R
Vishay Semiconductor
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6Pin TSOP T/R
Vishay Semiconductor
Vishay Siliconix
Transistor
Vishay Siliconix
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
VISHAY
TSOP N+P 30V 2.5A/1.8A
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