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SI3457DV
$ 0.289
SI3457DV Datasheet PDF
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SI3457DV Specifications

TYPE
DESCRIPTION
Number of Pins
6 Pin
Case/Package
TSOT-23-6
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.044 Ω
Power Dissipation
1.6 W
Drain to Source Voltage (Vds)
30 V
Rise Time
12 ns
Input Capacitance (Ciss)
470pF @15V(Vds)
Input Power (Max)
800 mW
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1600 mW

SI3457DV Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃

SI3457DV Documents

ON Semiconductor
7 Pages / 0.19 MByte

SI3457 Documents

VISHAY
TSOP-6P-CH 30V 5.1A 74mΩ
Fairchild
MOSFET P-CH 30V 4A SSOT-6
VISHAY
TSOP-6P-CH 30V 5.1A 74mΩ
Vishay Siliconix
VISHAY SILICONIX SI3457CDV-T1-GE3 MOSFET Transistor, P Channel, -5.1A, -30V, 60mohm, -10V, -1V
ON Semiconductor
MOSFET P-CH 30V 4A SSOT-6
Vishay Siliconix
MOSFET P-CH 30V 5.1A 6-TSOP
Vishay Semiconductor
MOSFET 30V 5.1A 3W 74mohm @ 10V
VISHAY
TSOP P-CH 30V 3.7A
Vishay Siliconix
MOSFET 30V 4.3A 2W
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.044Ω; ID -3.7A; TSOP-6; PD 1.14W; VGS +/-20
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