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Part Datasheet Search > MOSFETs > VISHAY > SI1012R-T1-GE3 Datasheet PDF
SI1012R-T1-GE3
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SI1012R-T1-GE3 Datasheet PDF (8 Pages)
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SI1012R-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-75
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.41 Ω
Polarity
N-Channel
Power Dissipation
0.275 W
Threshold Voltage
800 mV
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
600 mA
Rise Time
5 ns
Input Power (Max)
150 mW
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
275 mW

SI1012R-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI1012R-T1-GE3 Documents

VISHAY
8 Pages / 0.16 MByte
VISHAY
11 Pages / 0.22 MByte

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